Partial Coaxial Through-Silicon via for Suppressing the Substrate Noise in 3-Dimensional Integrated Circuit
نویسندگان
چکیده
منابع مشابه
Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related fai...
متن کاملSubstrate Integrated Evanescent Filters Employing Coaxial Stubs
Evanescent mode substrate integrated waveguide (SIW) is one of the promising technologies for design of light-weight low-cost microwave components. Traditional realization methods used in the standard evanescent waveguide technology are often not directly applicable to SIW due to dielectric filling and small height of the waveguide. In this work, one of the realization methods of evanescent mod...
متن کاملClosed-Form Equations for Through-Silicon Via (TSV) Parasitics in 3-D Integrated Circuits
Roshan Weerasekera, Dinesh Pamunuwa, Matt Grange † †Centre for Microsystems Engineering, Faculty of Science & Technology, Lancaster University, Lancaster LA1 4YR, UK. Email: {r.weerasekera,d.pamunuwa,m.grange}@lancaster.ac.uk Hannu Tenhunen, Li-Rong Zheng ∗ Department of Electronics, Computer, and Software Systems, KTH School of Information and Communication Technologies, ELECTRUM 229, 164 40 K...
متن کاملSilicon wafers for integrated circuit process
2014 Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by det...
متن کاملHeterogeneous 3D IC Stacking Using Ultra-Dense Mechanically Flexible Interconnects
This paper presents gold passivated dense NiW mechanically flexible interconnects (MFIs) for advanced 3D heterogeneous IC integration. The MFIs are fabricated with a pitch as small as 25 μm, a maximum height of 65 μm, and can be engineered to provide a wide range of mechanical stiffness and vertical range of motion within the elastic region. The compliance for the fabricated MFIs is measured to...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2928951